Solid-State Power Devices: Operational Reliability and Parameters' Stability
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Solid-State Power Devices: Operational Reliability and Parameters' Stability
Irace, Andrea; Breglio, Giovanni; Riccio, Michele
Trans Tech Publications Ltd
09/2024
134
Mole
9783036406473
15 a 20 dias
Descrição não disponível.
Preface
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
UIS Ruggedness of Parallel 4H-SiC MOSFETs
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
Demonstration of 800 degreesC SiC MOSFETs for Extreme Temperature Applications
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
UIS Ruggedness of Parallel 4H-SiC MOSFETs
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
Demonstration of 800 degreesC SiC MOSFETs for Extreme Temperature Applications
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Bias Temperature Instability;Bipolar Degradation;Device Lifetime;Dielectric Breakdown;Failure Analysis;Gate Oxide Degradation;Gate Switching Instability;High Power Electronics;Irradiation;Overload Protection;Reliability;Schottky Diode;SiC MOSFET
Preface
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
UIS Ruggedness of Parallel 4H-SiC MOSFETs
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
Demonstration of 800 degreesC SiC MOSFETs for Extreme Temperature Applications
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses
Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests
Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature
Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults
Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes
A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB
Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure
Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
UIS Ruggedness of Parallel 4H-SiC MOSFETs
The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions
Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact
AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs
Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode
Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET
Demonstration of 800 degreesC SiC MOSFETs for Extreme Temperature Applications
Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
