Growing and Forming of Semiconductor Layers
portes grátis
Growing and Forming of Semiconductor Layers
Breglio, Giovanni; Irace, Andrea; Riccio, Michele
Trans Tech Publications Ltd
09/2024
116
Mole
9783036406312
15 a 20 dias
Descrição não disponível.
Preface
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films
Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
Resistivity as a Witness of Local Crystal Growth Conditions
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
4H-SiC Crystal Growth Using Recycled SiC Powder Source
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films
Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
Resistivity as a Witness of Local Crystal Growth Conditions
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
4H-SiC Crystal Growth Using Recycled SiC Powder Source
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Boron Carbide;Chemical Vapour Deposition;Crystal Growth;Gallium Nitride;Heteroepitaxial Growth;Layer Growth;MOSFET;Silicon Carbide;Substrate;Wafer
Preface
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films
Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
Resistivity as a Witness of Local Crystal Growth Conditions
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
4H-SiC Crystal Growth Using Recycled SiC Powder Source
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
Vertical Current Transport in Monolayer MoS2 Heterojunctions with 4H-SiC Fabricated by Sulfurization of Ultra-Thin MoOx Films
Estimation of Influence on Carbon Vacancy Regarding 4H-SiC Substrate Grown by HTCVD Method
Resistivity as a Witness of Local Crystal Growth Conditions
GaN Cap UV Spectroscopy Assessment in AlGaN/GaN HEMT
SNDM Study of the MOS Interface State Densities on the 3C-SiC / 4H-SiC Stacked Structure
Development of 200mm SiC Technology - Epitaxial Thickness Uniformity Observation on Different 8 Inch 4H-SiC Substrates
4H-SiC Crystal Growth Using Recycled SiC Powder Source
High-Quality SiC Crystal Growth by Temperature Gradient Control at Initial Growth Stage
The Role of Air-Pocket in Crucible Structure for High Quality SiC Crystal Growth
Influence of the Size Distribution of the SiC Powder Source on the Shape of the Crystal Growth Interface during PVT Growth of 4H-SiC Boules
Confirmation of the Growth Mechanism of the Buffer Layer in Epitaxial Graphene on SiC
Suppressing the Memory Effect in Al Doped 3C-SiC Grown Using Chlorinated Chemistry
Investigations into the Impact of Deposition or Growth Techniques on the Field Oxide TID Response for 4H-SiC Space Applications
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Doping Efficiency and Long-Term Stability of Various SiC Epitaxial Reactors and Process Chemistries
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
