Nanoscale Semiconductors
portes grátis
Nanoscale Semiconductors
Materials, Devices and Circuits
Raman, Ashish; Raj, Balwinder
Taylor & Francis Ltd
08/2022
240
Dura
Inglês
9781032307541
15 a 20 dias
508
Descrição não disponível.
Chapter 1: Tunneling FETs, the Non-Conventional Transistor basics, Chapter 2: Fundamentals of TFET and Its Applications, Chapter 3: Trends and Challenges in VLSI Fabrication Technology, Chapter 4: The Transition from MOSFET to MBCFET: Fabrication and Transfer Characteristics, Chapter 5: High Speed Nano Scale Interconnects, Chapter 6: Performance Review of Static Memory Cell based on CMOS, FinFET, CNTFET and GNRFET design, Chapter 7: Novel Subthreshold Modelling of FinFET based energy-effective circuit designs, Chapter 8: Noise Performance of IMPATT Diode oscillatorat Different mm-Wave Frequencies, Chapter 9: Testing of Semiconductor Scaled Devices, Chapter 10: Investigation of TFET for Mixed Signal and Hardware Security Applications, Chapter 11: Junctionless Transistors: Evolution and Prospects
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Digital VLSI Circuits;Analog VLSI Circuits;Tunnel Field-Effect Transistor;Nanowire;Nanoelectromechanical Systems;Microelectromechanical Systems;FET;Field Effect Transistor;6T SRAM Cell;Short Channel Effects;Power Consumption;MOS Transistor;SRAM Cell;Drain Current;Metal Oxide Semiconductor Field Effect Transistor;Conventional MOSFET;PUF;IoT Device;Tunneling Current;PMOS Transistors;Metal Gate Electrode;Subthreshold Swing;MOS Device;SNM;Source Channel Junction;Flat Band Voltage;Carbon Nanotube Field Effect Transistors;Hybrid Interconnect;Metal Gate;Gate Electrode;Mem Device
Chapter 1: Tunneling FETs, the Non-Conventional Transistor basics, Chapter 2: Fundamentals of TFET and Its Applications, Chapter 3: Trends and Challenges in VLSI Fabrication Technology, Chapter 4: The Transition from MOSFET to MBCFET: Fabrication and Transfer Characteristics, Chapter 5: High Speed Nano Scale Interconnects, Chapter 6: Performance Review of Static Memory Cell based on CMOS, FinFET, CNTFET and GNRFET design, Chapter 7: Novel Subthreshold Modelling of FinFET based energy-effective circuit designs, Chapter 8: Noise Performance of IMPATT Diode oscillatorat Different mm-Wave Frequencies, Chapter 9: Testing of Semiconductor Scaled Devices, Chapter 10: Investigation of TFET for Mixed Signal and Hardware Security Applications, Chapter 11: Junctionless Transistors: Evolution and Prospects
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Digital VLSI Circuits;Analog VLSI Circuits;Tunnel Field-Effect Transistor;Nanowire;Nanoelectromechanical Systems;Microelectromechanical Systems;FET;Field Effect Transistor;6T SRAM Cell;Short Channel Effects;Power Consumption;MOS Transistor;SRAM Cell;Drain Current;Metal Oxide Semiconductor Field Effect Transistor;Conventional MOSFET;PUF;IoT Device;Tunneling Current;PMOS Transistors;Metal Gate Electrode;Subthreshold Swing;MOS Device;SNM;Source Channel Junction;Flat Band Voltage;Carbon Nanotube Field Effect Transistors;Hybrid Interconnect;Metal Gate;Gate Electrode;Mem Device
