Handbook of Silicon Carbide Materials and Devices
portes grátis
Handbook of Silicon Carbide Materials and Devices
Feng, Zhe Chuan
Taylor & Francis Ltd
12/2024
444
Mole
9781032383576
Pré-lançamento - envio 15 a 20 dias após a sua edição
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Part I: General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers -- Basic Principles and Techniques 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals 10. Near-Infrared Luminescent Centers in Silicon Carbide 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry 12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon Part IV: SiC Devices and Developments 13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection 14. SiC radiation detector based on metal-insulator-semiconductor structures 15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction
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SiC materials;SiC;Silicon Carbide;presolar;include presolar SiC history;vapor-liquid-solid growth;spectroscopic;3C-SiC/Si;CVD principles;CVD techniques;homoepitaxy;4H-SiC;cubic SiC;SiC thermal oxidation;MOS interface;raman scattering;near-infrared luminescent;Mueller matrix ellipsometry;raman microscopy;raman imaging;4H-SiC UV photodiodes;radiation detectors;short wavelength;synchrotron X-ray diffraction;Secondary Ion Mass Spectroscopy;CVD Technique;RBS Experiment;SiC Polytype;3C SiC;3C SiC Layer;Vapor Liquid Solid Growth;EPR Spectrum;SiC Film;IOP;SiC Substrate;SiC Crystal;Epitaxial Layer;Raman Spectrum;SiC Wafer;SiC Material;Epitaxial Graphene;Mm;SiC Layer;SiC CVD;Reststrahlen Band;SAED Pattern;VLS Process;Silicon Carbide Semiconductor;UV Photodetector
Part I: General 1. Silicon Carbide: Presolar SiC Star Dust Grains and the Human History of SiC from 1824 to 1974 2. Recent Progresses in Vapor-liquid-solid Growth of High-Quality SiC Single Crystal Films and Related Techniques 3. Spectroscopic investigations for the dynamical properties of defects in bulk and epitaxially grown 3C-SiC/Si (100) 4. SiC Materials, Devices and Applications: A Review of Developments and Challenges in the 21st Century Part II: SiC Materials Growth and Processing 5. CVD of SiC Epilayers -- Basic Principles and Techniques 6. Homo-epitaxy of thick crystalline 4H-SiC structural materials and applications in electric power system 7. Cubic SiC grown on 4H-SiC: Growth and Structural Properties 8. SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source Part III: SiC Materials Studies and Characterization 9. Multiple Raman Scattering Spectroscopic Studies of Crystalline Hexagonal SiC Crystals 10. Near-Infrared Luminescent Centers in Silicon Carbide 11. 4H-/6H-SiC single crystal wafers studied by Mueller matrix ellipsometry and transmission ellipsometry 12. Raman Microscopy and Imaging of Semiconductor Films Grown on SiC Hybrid Substrate Fabricated by the Method of Coordinated Substitution of Atoms on Silicon Part IV: SiC Devices and Developments 13. 4H-SiC-Based Photodiodes for Ultraviolet Light Detection 14. SiC radiation detector based on metal-insulator-semiconductor structures 15. Internal Atomic Distortion and Crystalline Characteristics of Epitaxial SiC Thin Films Studied by Short Wavelength and Synchrotron X-ray Diffraction
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
SiC materials;SiC;Silicon Carbide;presolar;include presolar SiC history;vapor-liquid-solid growth;spectroscopic;3C-SiC/Si;CVD principles;CVD techniques;homoepitaxy;4H-SiC;cubic SiC;SiC thermal oxidation;MOS interface;raman scattering;near-infrared luminescent;Mueller matrix ellipsometry;raman microscopy;raman imaging;4H-SiC UV photodiodes;radiation detectors;short wavelength;synchrotron X-ray diffraction;Secondary Ion Mass Spectroscopy;CVD Technique;RBS Experiment;SiC Polytype;3C SiC;3C SiC Layer;Vapor Liquid Solid Growth;EPR Spectrum;SiC Film;IOP;SiC Substrate;SiC Crystal;Epitaxial Layer;Raman Spectrum;SiC Wafer;SiC Material;Epitaxial Graphene;Mm;SiC Layer;SiC CVD;Reststrahlen Band;SAED Pattern;VLS Process;Silicon Carbide Semiconductor;UV Photodetector
