Growth and Application of AlN Single Crystal
portes grátis
Growth and Application of AlN Single Crystal
Huang, Jun; Xu, Ke
Springer Verlag, Singapore
03/2025
177
Dura
Inglês
9789819782642
15 a 20 dias
Descrição não disponível.
Basic Properties of Ain Single Crystal.- Physical Basis for the Growth of Ain Single Crystal.- Defects in Ain Single Crystal.- Growth of Ain Bulk Crystal by Physical Vapor Transport.- Growth of Thick Ain Layers by Hydride Vapor Phase Epitaxy.- Growth of Thin Ain Layers by Metal Organic Chemical Vapor Deposition.- Aluminium Nitride based Semiconductor Devices.
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AlN;Single Crystal;PVT;HVPE;MOCVD;Homogeneous Epitaxy;UV LED;Power Electronics;Physical Properties
Basic Properties of Ain Single Crystal.- Physical Basis for the Growth of Ain Single Crystal.- Defects in Ain Single Crystal.- Growth of Ain Bulk Crystal by Physical Vapor Transport.- Growth of Thick Ain Layers by Hydride Vapor Phase Epitaxy.- Growth of Thin Ain Layers by Metal Organic Chemical Vapor Deposition.- Aluminium Nitride based Semiconductor Devices.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
