Integrated Electronics on Aluminum Nitride
portes grátis
Integrated Electronics on Aluminum Nitride
Materials and Devices
Chaudhuri, Reet
Springer International Publishing AG
12/2022
255
Dura
Inglês
9783031171987
15 a 20 dias
576
Descrição não disponível.
Chapter 1. Introduction.- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures.- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors.- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures.- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors.- Chapter 6. Integrated RF Electronics on the AlN Platform.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
Aluminum nitride;Ultra-wide bandgap semiconductor;High-frequency communication materials;RF active devices;Integrated RF electronics;Aluminum nitride optoelectronics;Aluminum nitride heterostructure;Aluminum nitride waveguides;Ultra-wide bandgap electronics
Chapter 1. Introduction.- Chapter 2. Polarization-induced 2D Hole Gases in undoped (In)GaN/AlN Heterostructures.- Chapter 3. GHz-speed GaN/AlN p-channel Heterojunction Field Effect Transistors.- Chapter 4. Polarization-induced 2D Electron and Holes in undoped AlN/GaN/AlN Heterostructures.- Chapter 5. AlN/GaN/AlN High Electron Mobility Transistors.- Chapter 6. Integrated RF Electronics on the AlN Platform.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
