Device Circuit Co-Design Issues in FETs

Device Circuit Co-Design Issues in FETs

Tayal, Shubham; Rahi, Shiromani Balmukund; Labiod, Samir; Smaani, Billel; Ramezani, Zeinab

Taylor & Francis Ltd

01/2025

262

Mole

9781032416823

Pré-lançamento - envio 15 a 20 dias após a sua edição

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1. Modeling for CMOS Circuit Design. 2. Conventional CMOS Circuit Design. 3. Compact modeling of junctionless Gate-All-Around MOSFET for circuit simulation. 4. Novel Gate-Overlap Tunnel FETs for Superior Analog, Digital, and Ternary Logic Circuit Applications. 5. Phase Transition Materials for Low Power Electronics. 6. Impact of total ionizing dose effect on SOI-FinFET with spacer engineering. 7. Scope and Challenges with Nanosheet FET based Circuit design. 8. Scope with TFET based Circuit and System Design. 9. An overview of FinFET based Capacitorless 1T-DRAM. 10. Literature Review of the SRAM Circuits Design Challenges. 11. Challenges and Future Scope of Gate-All-Around (GAA) Transistors: Physical Insights of Device-Circuit Interactions.
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FinFET;CMOS Inverter;Tunnel FET;SRAM;Analog/RF FOM;FET Circuits;3D FETs;OTA;PTM;Low Power Application;Power Consumption;SCEs;Field Effect Transistors;SRAM Cell;6T SRAM;SS;6T SRAM Cell;Field Effect Transistor;DS Characteristic;Current Mirror;CMOS Circuit Design;NAND Gate;Phase FET;CMOS Technology;Metal Oxide Semiconductor Field - Effect Transistor;FET;Cascode Current Mirror;Access Transistors;Spice Simulation;Cm;Current Mirror Circuits;MOS Structure;Interface Trap Charges