Beyond Si-Based CMOS Devices
portes grátis
Beyond Si-Based CMOS Devices
Materials to Architecture
Nandan, Durgesh; Sharma, Shashi Kant; Singh, Sangeeta
Springer Verlag, Singapore
09/2024
326
Dura
9789819746224
15 a 20 dias
Descrição não disponível.
Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges.- Nanowire Based Si CMOS Devices.- Carbon Nanotube FETS: An Alternative For Beyond Si Devices.- Graphene Based Devices for Beyond CMOS Applications.- Other Potential 2-D Materials for CMOS Applications.- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices.- TFET: From Material to Device Perspective.- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device.- Nanoelectromechanical Switches: As a Steep switching Device.- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET.- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET.- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device.- Spin Field-Effect Transistor: For Steep Switching Behaviour.
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Beyond Si Based CMOS Devices;Nanowire Based Si CMOS Devices;Carbon Nanotube FETS;Graphene Based Devices;Heterogeneous Integration of 2-D Materials;Negative Capacitance Field Effect Transistor
Beyond Si Based CMOS Devices: Needs, Opportunities and Challenges.- Nanowire Based Si CMOS Devices.- Carbon Nanotube FETS: An Alternative For Beyond Si Devices.- Graphene Based Devices for Beyond CMOS Applications.- Other Potential 2-D Materials for CMOS Applications.- Heterogenous Integration of 2D Materials with Silicon-Complementary Metal Oxide Semiconductor (Si-CMOS) Devices.- TFET: From Material to Device Perspective.- Negative Capacitance Field Effect Transistor (NCFET): Strong Beyond CMOS Device.- Nanoelectromechanical Switches: As a Steep switching Device.- The Device-Circuit Co-Design Perspective on Phase-Transition and Hybrid Phase-Transition (Hyper-) FETs, Phase-FETs, and MOSFET.- Feedback Field-Effect Transistors/ Zero Subthreshold Swing and Zero Impact Ionization FET.- Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device.- Spin Field-Effect Transistor: For Steep Switching Behaviour.
Este título pertence ao(s) assunto(s) indicados(s). Para ver outros títulos clique no assunto desejado.
